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newwave激光划片机
NEWWAVE激光划片机
AccuScribe 2Z Manual LED Laser Scribing System
355nm laser technology
Fast wafer processing up to 16.0 WPH
3-Switchable Objective Alignment & Viewing
Automatic/Manual Wafer Alignment & Z-Focusing
Increased Field-of-View (FOV) Alignment
Increased Depth-of-Focus (DOF) Scribing
Precision Edge-Detection Scribe Control
Manual Mode Easy-to-Use GUI
Yield maximizing partial wafer scribing
Robust Backside Alignment (Option)
Gen-2 Dynamic AutoFocus System (Option)
Multiple substrate material capability
Up to 4”wafer capability
Gen-3 Advanced debris removal
GEM/SECS & Data Management
Consistent and narrow cutting Kerf width at 25 μm depth across the wafer.*
Wafer Throughput* Up to 16.0 WPH
Scribing
Depth* 25 ± 2 μm (typically)
Kerf Width* < 7.0 μm (typically)
X-Y Stage
Travel 110mm x 110mm
Encoder resolution 0.1 μm
Accuracy <2 um over 100 mm
Bidirectional Repeatability ± 0.5 μm (max)
Orthogonality 8 arc-second (≤ 2.0μm over 100mm travel)
System Straightness ≤ 2 μm over 100 mm travel
Dynamic AutoFocus Dynamic Range +/-100μm , Accuracy ±2μm
Rotational Resolution 0.0003°
Wafer Chuck Size Supports 4” wafer
System Dimension Specifications
Chiller Width = 43.8 cm [17.25”], Width = 53.3 cm [21”], Height = 33.0 cm [13”]
System Footprint (without Chiller) 127.0 cm x 119.4 cm [47.3” x 79”]
Site Requirements
Voltage 100-120 or 200-240 VAC 50/60 Hz, Single Phase, Earth Ground.
Power Consumption 1500W max.(<15Amp @ 100VAC, <7.5Amp @200Vac)
Ambient temperature 20° - 25° C (68° - 77° F)
Wafer vacuum Vacuum source: 24” Hg, 1.1 CFM. Regulate to 15”Hg
Vacuum for debris removal ID tube. Vacuum source: 26”Hg, 4.5 CFM. Regulate to 2 CFM.
Compressed Dry Clean Air for Debris Removal Input pressure: 30 PSI Regulate to 10 PSIG & 15 SCSH.
联系方式
深圳市傲内电子有限公司
地址：深圳市宝安区石岩镇台湾工业区三重大厦B栋2楼
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![NEWWAVE激光划片机 AccuScribe 2Z Manual LED Laser Scribing System 355nm laser technology Fast wafer processing up to 16.0 WPH 3-Switchable Objective Alignment & Viewing Automatic/Manual Wafer Alignment & Z-Focusing Increased Field-of-View (FOV) Alignment Increased Depth-of-Focus (DOF) Scribing Precision Edge-Detection Scribe Control Manual Mode Easy-to-Use GUI Yield maximizing partial wafer scribing Robust Backside Alignment (Option) Gen-2 Dynamic AutoFocus System (Option) Multiple substrate material capability Up to 4”wafer capability Gen-3 Advanced debris removal GEM/SECS & Data Management Consistent and narrow cutting Kerf width at 25 μm depth across the wafer.* Wafer Throughput* Up to 16.0 WPH Scribing Depth* 25 ± 2 μm (typically) Kerf Width* < 7.0 μm (typically) X-Y Stage Travel 110mm x 110mm Encoder resolution 0.1 μm Accuracy <2 um over 100 mm Bidirectional Repeatability ± 0.5 μm (max) Orthogonality 8 arc-second (≤ 2.0μm over 100mm travel) System Straightness ≤ 2 μm over 100 mm travel Dynamic AutoFocus Dynamic Range +/-100μm , Accuracy ±2μm Rotational Resolution 0.0003° Wafer Chuck Size Supports 4” wafer System Dimension Specifications Chiller Width = 43.8 cm [17.25”], Width = 53.3 cm [21”], Height = 33.0 cm [13”] System Footprint (without Chiller) 127.0 cm x 119.4 cm [47.3” x 79”] Site Requirements Voltage 100-120 or 200-240 VAC 50/60 Hz, Single Phase, Earth Ground. Power Consumption 1500W max.(<15Amp @ 100VAC, <7.5Amp @200Vac) Ambient temperature 20° - 25° C (68° - 77° F) Wafer vacuum Vacuum source: 24” Hg, 1.1 CFM. Regulate to 15”Hg Vacuum for debris removal ID tube. Vacuum source: 26”Hg, 4.5 CFM. Regulate to 2 CFM. Compressed Dry Clean Air for Debris Removal Input pressure: 30 PSI Regulate to 10 PSIG & 15 SCSH.](http://cn.newmaker.com/nmsc/u/2011/20118/pro_img/20118314284527382.jpg){kind=link}