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STMicroelectronics 意法半导体（上海）有限公司
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功率MOSFET PowerFLAT™ 8x8 HV
ST自主开发的条状布局工艺及相关衍生工艺为功率MOSFET带来了革命性变化。功率MOSFET系列包括高级MDmeshTM以及面向高电压与极高电压功率MOSFET应用的PowerMESHTM。
低压STripFETTM家族面向直流/直流转换、汽车、运动控制和功率管理应用进行了优化。
通过采用创新封装技术，ST的功率MOSFET性能得到了进一步的提升。

PowerFLAT™ 8x8 HV：紧凑、高性能表面贴封装

The PowerFLAT™ 8x8 HV is a new high-performance 1 mm-high surface mount fully molded power package featuring a bottom exposed metal drain pad for efficient heat dissipation and improved thermal performance. Its low profile enables designers to achieve more compact designs for applications such as laptop power adapters, LCDs, lighting ballasts, telecom power equipment and solar micro-inverters. It can house the same maximum silicon die size as a TO-220 within a leadless 8 x 8 mm outline. The first device available in this new package option is the 650 V, 190 mΩ STL21N65M5 power MOSFET based on ST’s MDmesh™ V technology. The new package’s compact form factor and high thermal performance, combined with the unequalled low RDS(on) per die area of ST’s MDmesh V technology, maximize power density and save PCB space.

Features
Maximum thickness: 1 mm
Unequalled low RDS(on) x area
Creepage distance: 2.7 mm
Lead finishing: pure tin plating (Sn 100%)
Operating Tj between -55 and +150 °C
Halogen free
RoHS compliant
MSL level 1
Suited for wave soldering
Provided in 13” tape and reel

Benefits
Compactness
Higher power density
Reliability
High thermal performance, Rthj-amb = 45 °C/W (similar to D2PAK)
Increased efficiency in switching applications

Applications
Laptop power adapters
LCDs
Lighting ballasts
Telecom power equipment
Solar micro-inverters
联系方式
STMicroelectronics 意法半导体（上海）有限公司
地址：上海市东川路555号上海紫竹科学园区信息数码港四号楼1,4~6层
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